Evidence of silicide at the Ni/ β-Si3N4(0001)/Si(111) interface
Abstract
We present a study of a sub-nanometre interlayer of crystalline silicon nitride at the Ni/Si interface. We performed transmission electron microscopy measurements complemented by energy dispersive X-ray analysis to investigate to what extent the nitride layer act as a barrier against atom diffusion. The results show that discontinuous silicide areas can form just below the nitride layer, whose composition is compatible with that of the nickel disilicide. The Ni–Si reaction is tentatively attributed to the thermal strain suffered by the interface during the deposition of Ni at low temperature.
Autori
Piu Rajak, Regina Ciancio, Antonio Caretta, Simone Laterza, Richa Bhardwaj, Matteo Jugovac, Marco Malvestuto, Paolo Moras, Roberto Flammini
Rivista
Applied Surface Science
Data di pubblicazione
13/03/2023